1 dual n-channel 30-v (d-s) mosfet features ? h alogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % uis tested ? 100 % r g tested ? compl iant to rohs directive 2002/95/ec applications ? s et top box ? low current dc/dc product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 30 0.0 26 at v gs = 10 v 6.8 3.7 nc 0.033 at v gs = 4.5 v 5.8 d 1 g 1 d 1 d 2 g 2 d 2 so -8 5 6 7 8 top v ie w 2 3 4 1 s 1 s 2 n -channel mosfet g 1 d 1 s 1 n -channel mosfet g 2 d 2 s 2 notes: a. p a ckage limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 2 5 c, unless otherwise noted pa ram e ter sym bol limit un it d rain-source voltage v ds 30 v gate-source vo ltage v gs 20 c ontin uous drain current (t j = 150 c ) t c = 25 c i d 6.8 a a t c = 70 c 5. 2 t a = 25 c 5.2 b, c t a = 70 c 4.2 b, c pulsed dr ain current i dm 24 c ontinuous source-drain diode current t c = 25 c i s 2.25 t a = 25 c 1.48 b, c single pulse av alanche current l = 0.1 mh i as 5 single pulse av alanche energ y e as 1.25 mj m axim um power dissipation t c = 25 c p d 2.7 w t c = 70 c 1.77 t a = 25 c 1.78 b, c t a = 70 c 1.14 b, c opera ting j unction and storage temperature range t j , t stg - 55 to 150 c th erm al resistance ratings param eter symbol t ypical maximum u nit maxim um junction-to-ambient a, c, d t 10 s r thja 58 70 c /w m aximum junction-to-foot (drain) steady state r thjf 38 45 www.din-tek.jp dt m4 9 36
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 % b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arame ter s ymbol t est c onditions min. typ. max. unit static drain-source breakdown v oltage v ds v gs = 0 v , i d = 250 a 30 v v ds temper ature coefficient ' v ds /t j i d = 250 a 32 mv/c v gs(t h) t emperature co efficient ' v gs(t h) /t j - 5.0 gate-s o urce threshold voltage v gs(t h) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 2 0 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v , v gs = 0 v , t j = 55 c 10 on-state dr ain current a i d(on) v ds t 5 v, v gs = 10 v 10 a drain-source on-state re sista nce a r ds(o n ) v gs 10 v, i d = 5 a 0.0195 0.026 5 : v gs 4.5 v, i d = 4 a 0.026 0.03 3 f orward transconductance a g fs v ds = 10 v , i d = 5 a 16 s dynam i c b inpu t capacitance c iss v ds = 15 v , v gs = 0 v , f = 1 mhz 445 pf output capacitance c oss 75 re verse transfer capacitance c rss 37 to tal gate charge q g v ds = 15 v, v gs = 10 v, i d = 5 a 812 nc v ds = 15 v, v gs = 4.5 v, i d = 5 a 3.7 5.6 gate-s o urce charge q gs 1.4 gate-dr a in charge q gd 1.05 g ate resistance r g f = 1 mhz 0.8 4.3 8.6 : tu r n - o n d e l ay t i m e t d(o n) v dd = 1 5 v, r l = 3 : i d # 5 a, v gen = 4.5 v, r g = 1 : 12 24 ns rise time t r 55 100 t ur n-off delay time t d(off) 11 22 fa l l time t f 816 tu r n - o n d e l ay t i m e t d( on) v dd = 1 5 v, r l = 3 : i d # 5 a, v gen = 10 v, r g = 1 : 48 rise time t r 918 t ur n-off delay time t d(off) 10 20 fa l l time t f 612 drain - so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 2.25 a pulse diod e f orward current i sm 24 body diode v o ltage v sd i s = 2 a, v gs = 0 v 0.8 1.2 v body diode re verse recovery time t rr i f = 5 a, di/dt = 100 a/s, t j = 25 c 11 20 ns body diode reverse recovery charge q rr 48n c re verse recovery fall time t a 7 ns re v erse reco very rise time t b 4 z z z g l q w h n m s ' 7 0
3 typica l c har acteristics 25 c, unless otherwise noted outp ut characteristics on-resistance vs. drain current gate charge 0 6 12 1 8 24 30 0.0 0 .5 1.0 1.5 2.0 2.5 v gs =1 0 v thr u 5 v v gs =4 v v gs =3 v v ds - drain - to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.000 0.016 0.032 0.04 8 0.064 0.0 8 0 0 6 12 1 8 24 30 v gs =4. 5 v v gs =10 v - on-r esistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0.0 1 .7 3.4 5.1 6. 88 .5 v ds =15 v v ds =10 v i d =5a v ds =20 v - gate- t o-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs transf er characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 01234 5 t c = 25 c t c =12 5 c t c = - 55 c v gs - g ate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 110 220 330 440 550 0612 1 8 24 30 c iss c oss v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d =5a v gs =4. 5 v v gs =10 v t j -j u nction t emperat u re (c) ( n ormalized) - on - r esistance r ds(on) www.din-tek.jp dt m4 9 36
4 ty pi cal ch aracteristics 25 c, unless otherwise noted source- drain dio de forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -so u rce - to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - t emperat u re (c) on-resistan ce vs. gate-to-source voltage single pulse power 0.00 0.03 0.06 0.09 0.12 0.15 01234567 8 91 0 i d =5a t j =25 c t j = 125 c - on- r esistance ( ) r ds(o n ) v gs - g ate -to-so u rce v oltage ( v ) 0 10 20 30 40 50 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 safe operat ing area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 10 ms 1s 10 s dc v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d www.din-tek.jp dt m4 9 36
5 typica l c har acteristics 25 c, unless otherwise noted * t he power dissipation p d is based on t j(ma x) = 15 0 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dis- sipation limit for cases where additional heat sinking is used. it is used to determine the current rating, when this rating fal ls below the package limit. current derating* 0.0 1.5 3.0 4.5 6.0 7.5 0 25 50 75 100 125 150 t c - case t emperat u re (c) i d - drain c u rrent (a) powe r, ju nction-to-foot 0.0 0.7 1.4 2.1 2. 8 3.5 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) powe r, junction-to-ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 t a -am b ient t emperat u re (c) po w er ( w ) www.din-tek.jp dt m4 9 36
6 ty pi cal characteristics 25 c, unless otherwise noted norm alized t hermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =1 1 0 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa ce mo u nted d u ty c ycle = 0.5 single p u lse 0.02 0.05 no r malized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty c ycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 0.05 single p u lse 0.02 www.din-tek.jp dt m4 9 36
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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